Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

Chin. Phys. Lett.

2006, Vol. 23

Issue (4): 1029-1031 DOI:

Original Articles

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

CEN Zhan-Hong;XU Jun;LIU Yan-Song;HAN Pei-Gao;LI Wei;HUANG Xin-Fan;CHEN Kun-Ji

National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093

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CEN Zhan-Hong, XU Jun, LIU Yan-Song et al 2006 Chin. Phys. Lett. 23 1029-1031

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Abstract KrF excimer laser annealing on ultrathin hydrogenated amorphous Si films with various initial Si thicknesses is carried out to obtain a single layer of nanocrystalline Si structures. It is found that Si nanograins can be obtained with the area density as high as 10¹¹cm^-2 under the irradiation with suitable laser fluence. Raman and planar transmission electron microscopy are used to characterize the formation process of Si nanocrystals from amorphous phase. Moreover, a strong photoluminescence is observed at room temperature from well-relaxed nanocrystalline Si structures.

Keywords: 81.07.Bc 81.16.Mk 78.55.Ap

Published: 01 April 2006

PACS:	81.07.Bc	(Nanocrystalline materials)
	81.16.Mk	(Laser-assisted deposition)
	78.55.Ap	(Elemental semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I4/01029

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	CEN Zhan-Hong
	XU Jun
	LIU Yan-Song
	HAN Pei-Gao
	LI Wei
	HUANG Xin-Fan
	CHEN Kun-Ji

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