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Comparative Study of Properties of ZnO/GaN/Al2O3 and ZnO/Al2O3 Films Grown by Low-Pressure Metal Organic Chemical Vapour Deposition |
| ZHAO Bai-Jun1;YANG Hong-Jun1;DU Guo-Tong1; MIAO Guo-Qing2;YANG Tian-Peng1;ZHANG Yuan-Tao1;GAO Zhong-Min3;WANG Jin-Zhong1;FANG Xiu-Jun1;LIU Da-Li1;LI Wan-Cheng1;MA Yan1;YANG Xiao-Tian1;LIU Bo-Yang1 |
| 1State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jinlin University, Changchun 130023
2Open Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021
3State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University, Changchun 130023 |
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| Cite this article: |
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ZHAO Bai-Jun, YANG Hong-Jun, DU Guo-Tong et al 2003 Chin. Phys. Lett. 20 2045-2048 |
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Abstract ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al2O3 films and c-Al2O3 substrates. The structure and optical properties of the ZnO/GaN/Al2O3 and ZnO/Al2O3 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al2O3 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al2O3 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.
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| Keywords:
78.55.Cr
87.64.Bx
82.80.Pv
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Published: 01 November 2003
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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87.64.Bx
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(Electron, neutron and x-ray diffraction and scattering)
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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