Chin. Phys. Lett.  2003, Vol. 20 Issue (11): 2042-2044    DOI:
Original Articles |
Photoluminescence of SiOx Thin Films After Annealing at Various Temperatures
FANG Ying-Cui1;LI Lu-Ying2;ZHAO You-Yuan2;Qi Le-Jun2;LI Wei-Qing2;ZHANG Zhuang-Jian1;LU Ming2
1Department of Materials Science, Fudan University, Shanghai 200433 2Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
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FANG Ying-Cui, LI Lu-Ying, ZHAO You-Yuan et al  2003 Chin. Phys. Lett. 20 2042-2044
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Abstract We study photoluminescence (PL) of SiOx (0< x <2) thin films after annealing at temperatures in the range of 700-1100°C. The SiOx thin films were prepared by evaporation of SiO powder onto the substrate of Si(100). Two PL emission structures were observed in the measuring range of 580 -755 nm. The one centered around ~ 730 nm was confirmed to be due to Si nanocrystals. The origin for the other one spanning the range of 580-650 nm was investigated by using hydrogen and oxygen passivations, and by short time annealing at 1100°C followed by hydrogenation. Our results support the model of structural defects in SiO2 matrix for the origin of the 580-650 nm PL peak.


Keywords: 78.55.-m      73.63.Bd      78.68.+m     
Published: 01 November 2003
PACS:  78.55.-m (Photoluminescence, properties and materials)  
  73.63.Bd (Nanocrystalline materials)  
  78.68.+m (Optical properties of surfaces)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2003/V20/I11/02042
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FANG Ying-Cui
LI Lu-Ying
ZHAO You-Yuan
Qi Le-Jun
LI Wei-Qing
ZHANG Zhuang-Jian
LU Ming
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