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Ion-Implanted Waveguides in a Nd3+-Doped Silicate Glass |
| LI Shi-Ling1;CHEN Feng1;WANG Xue-Lin1;FU Gang1;WANG Ke-Ming1,2;LU Qing-Ming3;LI Xi-Shan4;SHEN Ding-Yu5;MA Hong-Ji5;NIE Rui5 |
| 1Department of Physics, Shandong University, Jinan 250100
2State Key Laboratory of Crystal Materials, Shandong
University, Jinan 250100
3School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100
4Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
5Department of Technical Physics and the Key Laboratory of Heavy Ion Physics (Ministry of Education), Peking University, Beijing 100871 |
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| Cite this article: |
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LI Shi-Ling, CHEN Feng, WANG Xue-Lin et al 2003 Chin. Phys. Lett. 20 1994-1996 |
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Abstract Monomode enhanced-index Nd3+-doped silicate glass waveguides fabricated by ion implantation are reported. The Nd3+-doped silicate glass was implanted by 3.0 MeV B+ ions, 3.0 MeV O+ ions and 4.5 MeV Ni2+ ions, respectively. A prism-coupling method was carried out to measure dark modes in the Nd3+-doped silicate glass using a model 2010 prism coupler. The moving fibre method was applied to measure the waveguide propagation loss. After a moderate annealing, the 3.0-MeV B+-ion implanted waveguide loss is about 3.54 dB/cm; the 3.0-MeV O+-ion implanted waveguide loss is about 5.36 dB/cm; and the 4.5-MeV the Ni2+-implanted waveguide loss is about 7.55 dB/cm. The results show that with the increasing ion mass, the loss in implanted waveguide is increased.
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| Keywords:
61.72.Ww
42.79.Gn
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Published: 01 November 2003
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