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Controlled Growth of Carbon Nanotubes and Its Field Emission
Properties |
| FAN Zhi-Qin1,2;ZHANG Bing-Lin1;YAO Ning1;LU Zhan-Ling1;YANG Shi-E1;MA Bing-Xian1 |
| 1Department of Physics, Zhengzhou University, Zhengzhou 450052
2Department of Mathematics and Physics, Zhengzhou Institute of Technology, Zhengzhou 450052 |
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| Cite this article: |
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FAN Zhi-Qin, ZHANG Bing-Lin, YAO Ning et al 2003 Chin. Phys. Lett. 20 1991-1993 |
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Abstract Uniform films of aligned carbon nanotubes were grown on a patterned Ni coated ceramic substrate by microwave plasma chemical vapor deposition (MWPCVD). A laser writing technique was used to make some patterns on the substrate. The controlled selective growth of nanotubes on the patterned substrate can be obtained directly during the reaction process in the MWPCVD chamber. The Raman spectrum shows a good graphitization of the carbon nanotubes. In the field emission test, turn-on field of V/μm and emission current density of 5 mA/cm2 at 3.3 V/μm were achieved.
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61.46.+w
79.70.+q
81.15.Gh
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Published: 01 November 2003
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61.46.+w
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79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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