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Structure and Photoluminescence of Nano-ZnO Films Grown on a Si (100) Substrate by Oxygen- and Argon-Plasma-Assisted Thermal Evaporation of Metallic Zn |
| LU Li-Xia1,2;TANG Qin-Xin1,SHAO Chang-Lu1;LIU Yi-Chun1,3 |
| 1Center for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024
2School of Science, Hebei University of Technology, Tianjin 300130
3Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics & Physics, Chinese Academy of Sciences, Changchun 130021 |
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| Cite this article: |
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LU Li-Xia, TANG Qin-Xin, SHAO Chang-Lu et al 2005 Chin. Phys. Lett. 22 998-1001 |
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Abstract Nano-ZnO thin films were prepared by oxygen- and argon-plasma-assisted thermal evaporation of metallic Zn at low temperature, followed by low-temperature annealing at 300°C to 500°C in oxygen ambient. X-ray diffraction patterns indicate that the nano-ZnO films have a polycrystalline hexagonal wurtzite structure. Raman scattering spectra demonstrate the existence of interface layers between Zn and ZnO. Upon annealing at 400°C for 1h, the interface mode disappears, and photoluminescence spectra show a very strong ultraviolet emission peak around 381nm. The temperature-dependent PL spectra indicate that the UV band is due to free-exciton emission.
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| Keywords:
81.15.Jj
81.40.Ef
81.07.Bc
78.55.Et
78.66.Hf
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Published: 01 April 2005
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| PACS: |
81.15.Jj
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(Ion and electron beam-assisted deposition; ion plating)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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81.07.Bc
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(Nanocrystalline materials)
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78.55.Et
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(II-VI semiconductors)
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78.66.Hf
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(II-VI semiconductors)
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