Structure Properties of Mg<suB>x</suB>Zn<suB>1-x</suB>O Films Deposited at Low Temperature

Chin. Phys. Lett.

2005, Vol. 22

Issue (4): 995-997 DOI:

Original Articles

Structure Properties of Mg_xZn_1-xO Films Deposited at Low Temperature

ZHANG Xi-Jian;MA Hong-Lei;WANG Qing-Pu;MA Jin;ZONG Fu-Jian;XIAO Hong-Di;JI Feng

School of Physics and Microelectronics, Shandong University, Jinan 250100

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ZHANG Xi-Jian, MA Hong-Lei, WANG Qing-Pu et al 2005 Chin. Phys. Lett. 22 995-997

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Abstract Mg_xZn_1-xO films (x=0.23) have been prepared on silicon substrates by radio-frequency magnetron sputtering at 80°C. The structure properties of Mg_xZn_1-xO films are studied using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), x-ray photoelectron spectroscopy and Raman spectra. The analysis of XRD and HRTEM indicates that the Mg_xZn_1-xO films have hexagonal wurtzite single-phase structures and a preferred orientation with the c axis perpendicular to the substrates. Raman spectra of ZnO and Mg_xZn_1-xO films reveal that the Mg_xZn_1-xO films have not only the hexagonal wurtzite structure but also higher crystalline quality than ZnO films.

Keywords: 81.15.Cd 68.55.Jk 78.30.Fs

Published: 01 April 2005

PACS:	81.15.Cd	(Deposition by sputtering)
	68.55.Jk
	78.30.Fs	(III-V and II-VI semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I4/0995

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	ZHANG Xi-Jian
	MA Hong-Lei
	WANG Qing-Pu
	MA Jin
	ZONG Fu-Jian
	XIAO Hong-Di
	JI Feng

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