| Original Articles |
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Unit-Cell by Unit-Cell Homoepitaxial Growth Using Atomically Flat SrTiO3(001) Substrates and Pulsed Laser Deposition |
| FEI Yi-Yan1;WANG Xu1;LU Hui-Bin1;YANG Guo-Zhen1;ZHU Xiang-Dong1,2 |
| 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Department of Physics, University of California at Davis, Davis, CA 95616, USA |
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| Cite this article: |
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FEI Yi-Yan, WANG Xu, LU Hui-Bin et al 2005 Chin. Phys. Lett. 22 1002-1005 |
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Abstract Using a combination of chemical etching and thermal annealing methods, we have obtained atomically flat TiO2-terminated SrTiO3(001) with large terraces. The average width of the terrace is only determined by miscut angles. When we continuously grow tens of SrTiO3 monolayers on such a surface under pulsed laser ablation deposition condition at 621°C, the growth proceeds in a layer-by-layer mode characterized by un-damped oscillations of the specular RHEED intensity. After the growth of 180 monolayers, the surface morphology is restored to the pre-growth condition with similarly large terraces after annealing in vacuum for only 30min, indicating efficient mass transfer on TiO2-terminated terraces.
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| Keywords:
81.65.-b
68.55.-a
81.15.Fg
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Published: 01 April 2005
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| PACS: |
81.65.-b
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(Surface treatments)
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68.55.-a
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(Thin film structure and morphology)
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81.15.Fg
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(Pulsed laser ablation deposition)
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