Chin. Phys. Lett.  2005, Vol. 22 Issue (3): 657-660    DOI:
Original Articles |
Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon
ZHU Xian-Fang1,2,3;WANG Zhan-Guo2
1Laboratory of Low-Dimensional Nanostructures, Department of Physics and Nanomaterials Center, Xiamen University, Xiamen 361005 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 3Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, IL 61801, USA
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ZHU Xian-Fang, WANG Zhan-Guo 2005 Chin. Phys. Lett. 22 657-660
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Abstract We model the recent experimental results and demonstrate that the internal shrinkage of nanocavities in silicon is intrinsically associated with preferential amorphization as induced by self-ion irradiation. The results reveal novel thermodynamic nonequilibrium properties of such an open-volume nanostructure in condensed matter and also of covalently bound amorphous materials both at nanosize scale and during ultrafast interaction with energetic beam.
Keywords: 61.80.Jh      61.82.Fk      61.82.Rx      68.03.Cd     
Published: 01 March 2005
PACS:  61.80.Jh (Ion radiation effects)  
  61.82.Fk (Semiconductors)  
  61.82.Rx (Nanocrystalline materials)  
  68.03.Cd (Surface tension and related phenomena)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I3/0657
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