| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Giant Tunneling Magnetoresistance in Spin-Filter Magnetic Tunnel Junctions Based on van der Waals A-Type Antiferromagnet CrSBr |
| Guibin Lan1,2†, Hongjun Xu1,3†, Yu Zhang1,2, Chen Cheng1, Bin He1,2, Jiahui Li1,2, Congli He4*, Caihua Wan1,2,3, Jiafeng Feng1,2, Hongxiang Wei1,2, Jia Zhang5, Xiufeng Han1,2,3, and Guoqiang Yu1,2,3* |
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3Songshan Lake Materials Laboratory, Dongguan 523808, China
4Institute of Advanced Materials, Beijing Normal University, Beijing 100875, China
5School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
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| Cite this article: |
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Guibin Lan, Hongjun Xu, Yu Zhang et al 2023 Chin. Phys. Lett. 40 058501 |
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Abstract Two-dimensional van der Waals magnetic materials have demonstrated great potential for new-generation high-performance and versatile spintronic devices. Among them, magnetic tunnel junctions (MTJs) based on A-type antiferromagnets, such as CrI$_{3}$, possess record-high tunneling magnetoresistance (TMR) because of the spin filter effect of each insulating unit ferromagnetic layer. However, the relatively low working temperature and the instability of the chromium halides hinder applications of this system. Using a different technical scheme, we fabricated the MTJs based on an air-stable A-type antiferromagnet, CrSBr, and observed a giant TMR of up to 47000% at 5 K. Meanwhile, because of a relatively high Néel temperature of CrSBr, a sizable TMR of about 50% was observed at 130 K, which makes a big step towards spintronic devices at room temperature. Our results reveal the potential of realizing magnetic information storage in CrSBr-based spin-filter MTJs.
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Received: 12 March 2023
Express Letter
Published: 07 April 2023
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| PACS: |
85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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85.75.Dd
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(Magnetic memory using magnetic tunnel junctions)
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73.90.+f
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(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
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