| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Design of Lead-Free Films with High Energy Storage Performance via Inserting a Single Perovskite into Bi$_{4}$Ti$_{3}$O$_{12}$ |
| Qiong Wu , Xin Wu , Yue-Shun Zhao , and Shifeng Zhao* |
| Inner Mongolia Key Lab of Nanoscience and Nanotechnology, and School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China |
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| Cite this article: |
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Qiong Wu , Xin Wu , Yue-Shun Zhao et al 2020 Chin. Phys. Lett. 37 118401 |
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Abstract We report a distinctive way for designing lead-free films with high energy storage performance. By inserting different single perovskite cells into Bi$_{4}$Ti$_{3}$O$_{12}$, $P$–$E$ hysteresis loops present larger maximum polarization, higher breakdown strength and smaller slim-shaped area. We prepared 0.15Bi$_{7}$Fe$_{3}$Ti$_{3}$O$_{21}$-0.5Bi$_{4}$Sr$_{3}$Ti$_{6}$O$_{21}$-0.35Bi$_{4}$Ba$_{3}$Ti$_{6}$O$_{21}$ solid solution ferroelectric films employing the sol-gel method, and obtained high energy storage density of 132.5 J/cm$^{3}$ and efficiency of 78.6% while maintaining large maximum polarization of 112.3 μC/cm$^{2}$ and a high breakdown electric field of 3700 kV/cm. Moreover, the energy storage density and efficiency exhibit stability over the temperature range from 20 ℃ to 125 ℃, and anti-fatigue stability maintains up to 10$^{8}$ cycles. The films with a simple preparation method and high energy storage performance are likely to become candidates for high-performance energy storage materials.
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Received: 31 July 2020
Published: 08 November 2020
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| PACS: |
84.60.Ve
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(Energy storage systems, including capacitor banks)
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68.55.-a
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(Thin film structure and morphology)
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77.80.-e
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(Ferroelectricity and antiferroelectricity)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11864028 and 12074204). |
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