| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Surface Modification for WSe$_{2}$ Based Complementary Electronics |
| Ming-Liang Zhang , Xu-Ming Zou , and Xing-Qiang Liu* |
| Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University, Changsha 410082, China |
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| Cite this article: |
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Ming-Liang Zhang , Xu-Ming Zou , and Xing-Qiang Liu 2020 Chin. Phys. Lett. 37 118501 |
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Abstract High-performance WSe$_{2}$ complementary transistors are demonstrated on an individual flake by ozone exposure, which relies on the charge transfer mechanism. This technology is readily feasible for modulating the conductivity type in WSe$_{2}$, and the p–n junction presents a high on-off ratio of 10$^{4}$. Based on robust p-type transistors and matched output current of n-type WSe$_{2}$ transistors, the complementary inverter achieves a high voltage gain of 19.9. Therefore, this strategy may provide an avenue for development of high-performance complementary electronics.
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Received: 11 August 2020
Published: 08 November 2020
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| PACS: |
85.35.-p
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(Nanoelectronic devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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73.22.-f
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(Electronic structure of nanoscale materials and related systems)
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73.63.Bd
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(Nanocrystalline materials)
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| Fund: Supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0703704 and 2018YFB0406603), the National Natural Science Foundation of China (Grant Nos. 61851403, 51872084, 61704052, 61811540408, 51872084, and 61704051), the Key Research and Development Plan of Hunan Province (Grant No. 2018GK2064), and the Natural Science Foundation of Hunan Province (Grant Nos. 2017RS3021 and 2017JJ3033). |
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