GaN Films Grown on Si (111) Substrates Using a Composite Buffer with Low Temperature AlN Interlayer
FANG Yu-Tao, JIANG Yang** , DENG Zhen, ZUO Peng, CHEN Hong
Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
Abstract ：A GaN interlayer between low temperature (LT) AlN and high temperature (HT) AlN is introduced to combine HT AlN, LT AlN and composition-graded AlGaN as a novel buffer layer for GaN films grown on Si (111) substrates. The crystal quality, surface morphology and strain state of the GaN film with this new buffer are compared with those of GaN grown on a conventional buffer structure. By changing the thickness of LT AlN, the crystal quality is optimized and the crack-free GaN film is obtained. The in-plane strain in the GaN film can be changed from tensile to compressive strain with the increase in LT AlN thickness.
收稿日期: 2013-08-13
出版日期: 2014-02-28
:
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.05.Ea
(III-V semiconductors)
82.80.Gk
(Analytical methods involving vibrational spectroscopy)
[1] Pal S and Jacob C 2004 Bull. Mater. Sci. 27 501 2001 J. Cryst. Growth 25 150 2000 Jpn. J. Appl. Phys. 39 L1183 2009 Chin. Phys. B 18 4413 μ eche H, Leroux M and Gibart P 2001 Appl. Phys. Lett. 79 3230 2001 Appl. Phys. Lett. 79 2713 1999 Jpn. J. Appl. Phys. 38 L492 2013 Chin. Phys. Lett. 30 028101 2010 J. Vac. Sci. Technol. B 28 473 2008 J. Phys. D: Appl. Phys. 41 155317 2008 Superlattices Microstruct. 44 153 2003 J. Cryst. Growth 248 563 2002 Appl. Phys. Lett. 81 2722 2005 J. Cryst. Growth 276 381 2002 Phys. Status Solidi A 194 485 Acta Phys. Sin. 59 8021 (in Chinese)2011 J. Alloys Compd. 509 2227 2003 J. Phys. D: Appl. Phys. 36 A245 1997 Crit. Rev. Solid State Mater. Sci. 22 69 2008 J. Cryst. Growth 310 2314 2006 Appl. Phys. Lett. 88 041904 2002 J. Appl. Phys. 92 3503
[1]
.
[2]
.
[3]
.
[4]
.
[5]
.
[6]
.
[7]
.
[8]
.
[9]
.
[10]
.
[11]
.
[12]
.
[13]
.
[14]
.
[15]
.
2014, Vol. 31 
