Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs
ZHANG Tao, LU Hong-Liang, ZHANG Yi-Men, ZHANG Yu-Ming, YE Li-Hui
Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071
Sinusoidal Steady State Analysis on 4H--SiC Buried Channel MOSFETs
Microelectronics Institute, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071
摘要With the combined use of the drift-diffusion (DD) model, experimental measured parameters and small-signal sinusoidal steady-state analysis, we extract the Y-parameters for 4H--SiC buried-channel metal oxide semiconductor field effect transistors (BCMOSFETs). Output short-circuit current gain G and Mason's invariant U are calculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT=800MHz and fmax=5GHz are extracted for the 4H--SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGS=4.5V. Simulation results clearly show that the characteristic frequency of 4H--SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.
Abstract：With the combined use of the drift-diffusion (DD) model, experimental measured parameters and small-signal sinusoidal steady-state analysis, we extract the Y-parameters for 4H--SiC buried-channel metal oxide semiconductor field effect transistors (BCMOSFETs). Output short-circuit current gain G and Mason's invariant U are calculated for extrapolating unity current gain frequency in the common-source configuration fT and the maximum frequency of oscillation fmax, respectively. Here fT=800MHz and fmax=5GHz are extracted for the 4H--SiC BCMOSFETs, while the field effect mobility reaches its peak value 87cm2/Vs when VGS=4.5V. Simulation results clearly show that the characteristic frequency of 4H--SiC BCMOSFETs and field effect mobility are superior, due to the novel structure, compared with conventional MOSFETs.
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2008, Vol. 25 
