Dependence of Growing High-Quality Gem Diamonds on Growth Rates by Temperature Gradient Method
ZANG Chuan-Yi, JIA Xiao-Peng, REN Guo-Zhong, WANG Xian-Cheng
The National Key Laboratory for Superhard Materials, Jilin University, Changchun 130012
Dependence of Growing High-Quality Gem Diamonds on Growth Rates by Temperature Gradient Method
ZANG Chuan-Yi;JIA Xiao-Peng;REN Guo-Zhong;WANG Xian-Cheng
The National Key Laboratory for Superhard Materials, Jilin University, Changchun 130012
关键词 ：
81.05.Uw ,
81.10.Aj ,
81.10.Dn ,
81.10.-h
Abstract ： Using the temperature gradient method under high pressure and high temperature, we investigate the dependence of growing high-quality gem diamond crystals on the growth rates. It is found that the lower the growth rate of gem diamond crystals, the larger the temperature range of growing high-quality gem diamond crystals, and the easier the control of temperature. In particular, when growing gem diamonds under a very-low growth rate, the temperature range of growing high-quality gem diamonds can extend from a low-temperature pure {100} growth region to {100}+{111} growth regions, and finally to a high-temperature only-{111}-growth region. When growing gem diamonds under a high growth rate, some metal inclusions in the growing diamonds always exist near the seeds, no matter whether the growth temperature is high or low. This result is not in agreement with the result of Sumitomo Electric Corporation in Japan.
Key words ：
81.05.Uw
81.10.Aj
81.10.Dn
81.10.-h
出版日期: 2004-08-01
:
81.05.Uw
81.10.Aj
(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
81.10.Dn
(Growth from solutions)
81.10.-h
(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
引用本文:
ZANG Chuan-Yi;JIA Xiao-Peng;REN Guo-Zhong;WANG Xian-Cheng. Dependence of Growing High-Quality Gem Diamonds on Growth Rates by Temperature Gradient Method[J]. 中国物理快报, 2004, 21(8): 1648-1650.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I8/1648
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2004, Vol. 21 
