中国物理快报  2009, Vol. 26 Issue (10): 108102-108102    DOI: 10.1088/0256-307X/26/10/108102
  CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 本期目录 | 过刊浏览 | 高级检索 |
Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric
HUANG Yue1, GOU Hong-Yan1, SUN Qing-Qing1, DING Shi-Jin1, ZHANG Wei1, ZHANG Shi-Li1,2
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden
Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric
HUANG Yue1, GOU Hong-Yan1, SUN Qing-Qing1, DING Shi-Jin1, ZHANG Wei1, ZHANG Shi-Li1,2
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden