Determination of the Lattice Parameters of a Si Nanobelt in a Tensile Test Process Using an MEMS Actuator
ZENG Hong-Jiang1,2, LI Tie1**, JIN Qin-Hua1, XU Fang-Fang3, WANG Yue-Lin1,2**
1Science and Technology on Micro-system Laboratory, State Key Laboratories of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 2Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230026 3Analysis and Testing Center for Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
Abstract：We present an experimental method for in-situ observation of the lattice behavior of a single crystal silicon nanobelt during uniaxial tensile testing. An in-situ silicon nanobelt tensile testing device for transmission electron microscopy is developed. Atomic behavior and lattice parameters of the nanobelt are studied using selected area electron diffraction. A statistical and least square methods are used for reducing the measurement errors of the lattice parameters. The results suggest that the trends of the lattice parameters during the tensile test are in agreement with the increasing tensile stress in the silicon nanobelt. Furthermore, the local strain calculated from lattice parameters and the average strain of the nanobelt are compared.
. [J]. Chin. Phys. Lett., 2012, 29(12): 126101-126101.
ZENG Hong-Jiang, LI Tie, JIN Qin-Hua, XU Fang-Fang, WANG Yue-Lin. Determination of the Lattice Parameters of a Si Nanobelt in a Tensile Test Process Using an MEMS Actuator. Chin. Phys. Lett., 2012, 29(12): 126101-126101.
2012, Vol. 29 
