Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer
Lu Liu, Yong Su** , Jing-Ping Xu, Yi-Xian Zhang
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
Abstract ：Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated, and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated. Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals. For capacitance-voltage measurements, it is found that the memory device with 1.5 nm ZnO and annealed at 700$^{\circ}\!$C shows a larger memory window of 4.3 V (at $\pm$6 V) and better retention characteristics than memory devices with 2.5 nm ZnO or annealed at other temperatures. These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.
收稿日期: 2018-01-30
出版日期: 2018-05-19
:
81.07.Bc
(Nanocrystalline materials)
81.15.Cd
(Deposition by sputtering)
81.16.Dn
(Self-assembly)
81.40.Ef
(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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2018, Vol. 35 
