2009, Vol. 26(10): 108102-108102    DOI: 10.1088/0256-307X/26/10/108102
Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric
HUANG Yue1, GOU Hong-Yan1, SUN Qing-Qing1, DING Shi-Jin1, ZHANG Wei1, ZHANG Shi-Li1,2
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden
收稿日期 2009-03-30  修回日期 1900-01-01
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