2009, Vol. 26(10): 108102-108102 DOI: 10.1088/0256-307X/26/10/108102 | ||
Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric | ||
HUANG Yue1, GOU Hong-Yan1, SUN Qing-Qing1, DING Shi-Jin1, ZHANG Wei1, ZHANG Shi-Li1,2 | ||
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 2004332School of Information and Communication, KTH, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden | ||
收稿日期 2009-03-30 修回日期 1900-01-01 | ||
Supporting info | ||
[1] Wang C C et al 2006 J. Appl. Phys. 99 026102 [2] Sliva H, Kim M K et al 2004 MRS Bull. 29 845 [3] Tseng J Y et al 2004 Appl. Phys. Lett. 85 2595 [4] Mao P et al 2009 Chin. Phys. Lett. 26 046102 [5] Hanafi H I, Tiwari S and Khan I 1996 IEEE Trans. [6] Liu Z T et al 2002 IEEE Trans. Electron Devices [7] Wang C C et al 2007 J. Phys. D 40 1673 [8] Guan W H et al 2007 J. Phys. D 40 2754 [9] Wang C C et al 2007 Appl. Phys. Lett. 90 [10] Punchaipetch P et al 2006 Appl. Phys. Lett. [11] Lee J J, Kwong D L 2005 IEEE Trans. Electron. [12] Huo S J, Li Q X, and Yan Y G 2005 J. Phys. Chem. B [13] Lee C, Anirdh G S, and Edwin C K 2003 Tech. Dig. [14] Huang Y, Liao Z W, Gou H Y, Ding S J and Zhang W 2009 [15] Kouvatsos D N, Sougleridis V L and Nassiopoulou A G 2003 [16] Teo L W, Choi W K, Chim W K, Ho V, Moey C M, Tay M S, |
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