Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling
WANG Kun1,2, DING Zhi-Bo1, LI Lin1, YAO Shu-De1
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 1008712Division of Metrology in Ionizing Radiation and Medicine, National Institute of Metrology, Beijing 100013
Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling
WANG Kun1,2, DING Zhi-Bo1, LI Lin1, YAO Shu-De1
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 1008712Division of Metrology in Ionizing Radiation and Medicine, National Institute of Metrology, Beijing 100013
摘要Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.9O/ZnO heterostructure grown on a sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.9O layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with χmin =5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal <12-13> axis in the {101-0} plane of both ZnO and MgZnO layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of eT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.
Abstract：Rutherford backscattering and channeling are used to characterize the structure of a ZnO/Mg0.1Zn0.9O/ZnO heterostructure grown on a sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. The results show that the Mg0.1Zn0.9O layer has the same hexagonal wurtzite structure as the underlying ZnO layer, and the heterostructure has a good crystalline quality with χmin =5%, which is the ratio of the backscattering yields of aligned and random spectra in the near-surface region. Using the channeling angular scan around an off-normal <12-13> axis in the {101-0} plane of both ZnO and MgZnO layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is determined. The depth dependence of eT is obtained by using this technique. It can clearly be seen that the elastic strain rapidly decreases with the increase in thickness of the ZnO film in the early growth stage and becomes slightly larger in the region of the Mg0.1Zn0.9O layer.
WANG Kun;DING Zhi-Bo;LI Lin;YAO Shu-De. Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling[J]. 中国物理快报, 2009, 26(10): 108101-108101.
WANG Kun, DING Zhi-Bo, LI Lin, YAO Shu-De. Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Rutherford Backscattering/Channeling. Chin. Phys. Lett., 2009, 26(10): 108101-108101.
[1] \"{Ozg\"{ur \"{U, Alivov Ya I, Liu C, Teke A,Reshchikov M A, Do\u{gan S, Avrutin V, Cho S J and Morko\c{c H2005 J. Appl. Phys. 98 041301 [2] Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, SumiyaM, Ohtani K, Chichibu S F, Fuke S, Segawa Y, Ohno H, Koinuma H andKawasaki M 2005 Nature Mater. 4 42 [3] Kwon Y, Li Y, Heo Y W, Jones M, Holloway P H, Norton D P,Park Z V and Li S 2004 Appl. Phys. Lett. 84 2685 [4] Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2005 Prog. Mater. Sci. 50 293 [5] Hill N A and Waghmare U 2000 Phys. Rev. B 628802 [6] Gruber Th, Prinz G M, Kirchner C, Kling R, Reuss F, LimmerW and Waag A 2004 J. Appl. Phys. 96 289 [7] Ong H C, Zhu A X E and Du G T 2002 Appl. Phys. Lett. 80 941 [8] Funato K, Hashimoto S, Yanashima K, Nakamura F and Ikeda M1999 Appl. Phys. Lett. 75 1137 [9] Domen K, Horino K, Kuramata A and Tanahashi T 1997 Appl. Phys. Lett. 70 987 [10] Makino T, Yasuda T, Segawa Y, Ohtomo A, Tamura K,Kawasaki M and Koinuma H 2001 Appl. Phys. Lett. 79 1282 [11] Hur T, Hwang Y, KimbIk H and Lee J 2006 J. Appl.Phys. 99 064308 [12] Chu W K, Mayer J W and Nicolet M A 1978 Backscattering Spectrometry (New York: Academic) [13] Prasada Rao T and Santhoshkumar M C 2009 Appl. Surf.Sci. 255 4579 [14] Choppali U and Gorman B P 2008 Opt. Mater. 31143 [15] Doolittle L R 1985 Nucl. Instrum. Methods Phys.Res. B 9 291 [16] Almamun Ashrafi A B M and Segawa Y 2005 J. Vac. Sci.Technol. B 23 2030 [17] Feng Z X, Yao S D, Hou L N and Jin R Q 2005 Nucl.Instrum. Methods Phys. Res. B 229 246 [18] KunisuM, Tanaka I, Yamamoto T, Suga T and Mizoguchi T2004 J. Phys.: Condens. Matter. 16 3801 [19] Almamun Ashrafi A B M, Binh N T, Zhang B and Segawa Y2004 Appl. Phys. Lett. 84 2814
2009, Vol. 26 
