摘要The dependence of the sinkage at the threshold of the electric derivative curve (IdV/dI-I) on the uniformity and the quality of the laser diode bar is analyzed. By using the equations derived from the equivalent circuits of the bars, the influence of the bar uniformity on the depth of the dip is investigated in theory under certain conditions. Furthermore, the experimental results based on the presented technique indicate that the depth of the dip is interrelated to the uniformity and the quality of the corresponding bar. The present technique can be used conveniently and effectively to measure the laser diode bars in practice.
Abstract：The dependence of the sinkage at the threshold of the electric derivative curve (IdV/dI-I) on the uniformity and the quality of the laser diode bar is analyzed. By using the equations derived from the equivalent circuits of the bars, the influence of the bar uniformity on the depth of the dip is investigated in theory under certain conditions. Furthermore, the experimental results based on the presented technique indicate that the depth of the dip is interrelated to the uniformity and the quality of the corresponding bar. The present technique can be used conveniently and effectively to measure the laser diode bars in practice.
(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
引用本文:
LIANG Qing-Cheng;SHI Jia-Wei;GUO Shu-Xu;LIU Kui-Xue;CAO Jun-Sheng. Dependence of Junction Voltage Saturation on Uniformity and Quality of Laser Diode Bars[J]. 中国物理快报, 2009, 26(12): 127504-127504.
LIANG Qing-Cheng, SHI Jia-Wei, GUO Shu-Xu, LIU Kui-Xue, CAO Jun-Sheng. Dependence of Junction Voltage Saturation on Uniformity and Quality of Laser Diode Bars. Chin. Phys. Lett., 2009, 26(12): 127504-127504.
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2009, Vol. 26 
