CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES
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Effect of Carrier Differences on Magnetoresistance in Organic and Inorganic Spin Valves
YUAN Xiao-Bo** , REN Jun-Feng, HU Gui-Chao
College of Physics and Electronics, Shandong Normal University, Jinan 250014
Effect of Carrier Differences on Magnetoresistance in Organic and Inorganic Spin Valves
YUAN Xiao-Bo** , REN Jun-Feng, HU Gui-Chao
College of Physics and Electronics, Shandong Normal University, Jinan 250014
Abstract ：Magnetoresistance in the structure of ferromagnetic/nonmagnetic/ferromagnetic spin valves are studied theoretically from the spin diffusion theory and Ohm's law. The nonmagnetic layer could be an organic or inorganic semiconductor. Carrier mobility and the spin-flip time in organic semiconductors are different from those in inorganic semiconductors, and effects of these differences on the magnetoresistance in organic and inorganic spin valves are discussed. From the calculation, it is found that the magnetoresistance in inorganic spin valves is higher than that in organic spin valves. Effects of the conductivity matching and spin-dependent interfacial resistances between ferromagnetic and nonmagnetic layers, thickness of the nonmagnetic layer, and the bulk spin polarization of the ferromagnetic layer on the magnetoresistance are also discussed.
收稿日期: 2012-03-02
出版日期: 2012-05-31
:
75.75.+a
75.47.-m
(Magnetotransport phenomena; materials for magnetotransport)
85.75.-d
(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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2012, Vol. 29 
