摘要We use ion implantation as a new approach to build an anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Co film with thickness of 130nm is deposited on the Si (111) substrate using magnetron sputtering, 60keV O+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe.
Abstract：We use ion implantation as a new approach to build an anti-ferromagnetic (AFM) cluster embedded exchange bias (EB) system. Co film with thickness of 130nm is deposited on the Si (111) substrate using magnetron sputtering, 60keV O+ is chosen to implanted into the Co film to form CoO AFM clusters coupling with Co matrix at the interface. By measuring the hysteresis loop after field-cooling, significant shifts of loop along the applied field are confirmed. When increasing the implantation dose to 2×1017/cm2 and annealed samples in N2 atmosphere, we obtain the highest HEB to 458Oe.
FA Tao;XIANG Qing-Pei;YAO Shu-De. Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties[J]. 中国物理快报, 2009, 26(12): 126101-126101.
FA Tao, XIANG Qing-Pei, YAO Shu-De. Fabrication of Co/CoO Exchange Bias System by Ion Implantation and Its Magnetic Properties. Chin. Phys. Lett., 2009, 26(12): 126101-126101.
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