Weak Gate Effect in 1,3-Benzenedithiol Molecular Device
SU Wen-Yong1, LUO Yi2
1Department of Physics, Beijing Institute of Technology,Beijing 1000812Department of Theoritial Chemistry, Royal Institute of Technology,AlbaNova S-10691, Stockholm, Sweden
Weak Gate Effect in 1,3-Benzenedithiol Molecular Device
SU Wen-Yong1, LUO Yi2
1Department of Physics, Beijing Institute of Technology,Beijing 1000812Department of Theoritial Chemistry, Royal Institute of Technology,AlbaNova S-10691, Stockholm, Sweden
We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.
We introduce a full interaction Hamiltonian method to the generalized quantum chemical approach and apply it to investigate the electron tunneling properties of 1,3-benzenedithiol molecular device. The weak gate effect we calculate is consistent with the experiment. The asymmetric current character mainly comes from the asymmetry of the molecule and the nonlinear responding to the gate electric field.
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