Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice
LONG Fei, LIU Shenzhi* , MEI Fei, MIAO Jingqi, LIANG Jingguo
Department of Physics, and * Computer Center, Jiangxi Normal University, Nanchang 330027
Department of Physics, Peking University, Beijing 100871
Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice
LONG Fei;LIU Shenzhi* ;MEI Fei;MIAO Jingqi;LIANG Jingguo
Department of Physics, and * Computer Center, Jiangxi Normal University, Nanchang 330027
Department of Physics, Peking University, Beijing 100871
关键词 ：
71.55.Eq ,
71.70.-d ,
73.20.Dx
Abstract ： The Energy band edges of type-II InAs/GaSb (001) misaligned superlattices as functions of InAs and GaSb layer thicknesses are calculated by a pseudopotential method with quick convergency. The results show the trend of deep-shallow transitions of impurities in the superlattices. The regime in which the superlattice changes from semiconductor to semimetal is also showed.
Key words ：
71.55.Eq
71.70.-d
73.20.Dx
出版日期: 1994-02-01
引用本文:
LONG Fei;LIU Shenzhi*;MEI Fei;MIAO Jingqi;LIANG Jingguo. Electronic Structure of Type-II InAs/GaSb Misaligned Superlattice[J]. 中国物理快报, 1994, 11(2): 109-112.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I2/109
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