Optical Interface Phonon in Graded Quantum Well Structures
ZHU Jialin1 , DUAN Wenhui2 , GU Binglin1
1 Department of Physics, Tsinghua University, Beijing 100084
2 Central Iron and Steel Research Institute, Beijing 100081
Optical Interface Phonon in Graded Quantum Well Structures
ZHU Jialin1 ;DUAN Wenhui2 ;GU Binglin1
1 Department of Physics, Tsinghua University, Beijing 100084
2 Central Iron and Steel Research Institute, Beijing 100081
关键词 ：
63.20.Dj ,
73.40.Lq ,
68.65.+g
Abstract ： The behaviour of optical interface phonon is investigated first for the graded quantum well of Gal-x Alx As in the dielectric continuum model. It is found that the behaviour of interface phonon modes is quite different from that in square quantum well structure. The dispersions of the interface modes are sensitive to the gradient of the graded quantum well structure, and the symmetry of modes can be changed greatly, which is important for phonon-related phenomena.
Key words ：
63.20.Dj
73.40.Lq
68.65.+g
出版日期: 1994-06-01
引用本文:
ZHU Jialin;DUAN Wenhui;GU Binglin. Optical Interface Phonon in Graded Quantum Well Structures[J]. 中国物理快报, 1994, 11(6): 349-352.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1994/V11/I6/349
[1]
ZHONG Hong-Wei;TANG Yi. Time-Dependent Variational Approach to the Phonon Dispersion Relation of the Commensurate Quantum Frenkel--Kontorova Model
[2]
Raid A. Ismail;Kadhim A. Hubeatir;Abdullah K. Abass. Amorphous/Crystalline (n-n) Si Heterojunction Photodetector Made by Q-Switched 0.532-mm Laser Pulses with Novel Technique
[3]
JIN Hua;ZHANG Li-Gong;ZHENG Zhu-Hong;AN Li-Nan;LU You-Ming;ZHANG Ji-Ying;FAN Xi-Wu;SHEN De-Zhen. Temperature-Dependent Photoluminescence in Coupling Structures of CdSe Quantum Dots and a ZnCdSe Quantum Well
[4]
LEI Huan; LIU Ci-Hui; LIN Bi-Xia; FU Zhu-Xi;. Influence of Interface Charge on Electrical Properties of ZnO/Si Heterojunction
[5]
GAO Yong;MA Li. Analysis and Optimal Design of a Novel SiGe/Si Power Diode for Fast and Soft Recovery
[6]
CHEN Zhi-Ming;PU Hong-Bin;Fred R. BEYETTE Jr.. A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer
[7]
ZHANG Xiao-Na;LI Chao-Rong;ZHANG Ze. Influence of Mass Transport on Formation of Si-Nanostructures
[8]
WANG Cheng-Xin;GAO Chun-Xiao;LIU Hong-Wu;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia. Preparation and Transparent Property of the n-ZnO/p-Diamond Heterostructure
[9]
LÜHui-Bin;DAI Shou-Yu;CHEN Zheng-Hao;LIU Li-feng;GUO Hai-Zhong;XIANG Wen-Feng;FEI Yi-Yan;HE Meng;ZHOU Yue-Liang;YANG Guo-Zhen. Colossal Magnetoresistive p-n Junctions of Te-Doped LaMnO3 /Nb-doped SrTiO3
[10]
LÜYou-Ming;SHEN De-Zhen;LIU Yi-Chun;LI Bing-Hui;LIANG Hong-Wei;ZHANG Ji-Ying;FAN Xi-Wu. Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grown by Molecular Beam Epitaxy
[11]
WANG Yan;DONG Shun-Le. Dynamical Behaviour of H2 O in Silica Gel
[12]
GE Shui-Bing;SHEN Ming-Rong;NING Zhao-Yuan. Dielectric Enhancement and Maxwell-Wagner Effect in Polycrystalline BaTiO3 /Ba0.2 Sr0.8 TiO3 Multilayered Thin Films
[13]
WANG Cheng-Xin;GAO Chun-Xiao;ZHANG Tie-Chen;LIU Hong-Wu;LI Xun;HAN Yong-Hao;LUO Ji-Feng;SHEN Cai-Xia. Preparation of p-n Junction Diode by B-Doped Diamond Film Grown on Si-Doped c-BN
[14]
LIU Ci-Hui;CHEN Yu-Lin;LIN Bi-Xia;ZHU Jun-Jie;FU Zhu-Xi;PENG Cong;YANG Zhen. Electrical Properties of ZnO/Si Heterostructure
[15]
HU Di-Li;PAN Bi-Cai;;LI Jia-Ming;. Properties of Single-Wall Carbon Nanotubes with Finite Lengths
1994, Vol. 11 
