Nucleation and Growth Processes During Molecular-Beam Epitaxy of Ternary Compounds
MAO Hui-bing
Department of Materials Science, Fudan University, Shanghai 200433
Nucleation and Growth Processes During Molecular-Beam Epitaxy of Ternary Compounds
MAO Hui-bing
Department of Materials Science, Fudan University, Shanghai 200433
关键词 ：
68.55.-a ,
68.35.Bs ,
68.35.Ja
Abstract ： In this letter the effect of the different migration rates of two kinds of cations on the nucleation and growth processes during molecular-beam epitaxy of ternary systems was studied in detail by Monte Carlo simulation. In AlGaAs ternary system, in which the migration rate of cation Ga is larger than that of Al, there are three types of nucleation: Ga-Ga, Al-Ga and Al-Al, which show different characteristics in the growth processes.
Key words ：
68.55.-a
68.35.Bs
68.35.Ja
出版日期: 1996-11-01
引用本文:
MAO Hui-bing. Nucleation and Growth Processes During Molecular-Beam Epitaxy of Ternary Compounds[J]. 中国物理快报, 1996, 13(11): 855-858.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I11/855
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1996, Vol. 13 
