Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux
QI Le-Jun1, LI Wei-Qing1, YANG Xin-Ju2, FANG Ying-Cui1, LU Ming1
1Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
2Surface Physics Laboratory, Fudan University, Shanghai 200433
Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux
1Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
2Surface Physics Laboratory, Fudan University, Shanghai 200433
Abstract： We investigate Si(100) surface morphology evolution under normal-incident Ar+ ions sputtering with low ion flux of 20μA/cm2. The results indicate that under the low flux ion sputtering, the nanostructuring process of Si(100) is governed by the Ehrlich--Schwoebel (ES) mechanism, rather than by the Bradley--Harper (BH) one for the case of high flux (normally the order of 102 μA/cm2 or larger). This work reveals that the ion flux plays an important role in the surface morphology evolution under ion sputtering, and a usually accepted classification that the ES mechanism is related to metal single-crystals under ion sputtering, while the BH one is to amorphous, and semiconductor targets is questionable.
QI Le-Jun;LI Wei-Qing;YANG Xin-Ju;FANG Ying-Cui;LU Ming. Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux[J]. 中国物理快报, 2005, 22(2): 431-434.
QI Le-Jun, LI Wei-Qing, YANG Xin-Ju, FANG Ying-Cui, LU Ming. Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux. Chin. Phys. Lett., 2005, 22(2): 431-434.
2005, Vol. 22 
