Identification of Defects in Undoped Semi-insulating InP
by Positron Lifetime
MAO Wei-Dong1 , WANG Shao-Jie1 , WANG Zhu1 , SUN Nie-Feng2 , SUN Tong-Nian2 , ZHAO You-Wen2
1 Department of Physics, Wuhan University, Wuhan 430072
2 Hebei Semiconductor Research Institute, Shijiazhuang 050051
Identification of Defects in Undoped Semi-insulating InP
by Positron Lifetime
MAO Wei-Dong1 ;WANG Shao-Jie1 ;WANG Zhu1 ;SUN Nie-Feng2 ;SUN Tong-Nian2 ;ZHAO You-Wen2
1 Department of Physics, Wuhan University, Wuhan 430072
2 Hebei Semiconductor Research Institute, Shijiazhuang 050051
关键词 ：
61.72.Ji ,
78.70.Bj ,
71.55.Eq
Abstract ： Positron lifetime measurements, carried out over the temperature range of 10-300 K, have been used to investigate defects in two undoped semi-insulating InP samples. The positron lifetime spectra were analysed by both PATFIT and MELT techniques. The results at room temperature reveal a positron lifetime around 273 ps, which is associated with indium vacancies VIn or VIn -hydrogen complexes. The positron average lifetime is temperature dependent and decreases with increasing temperature at the beginning (≤ 80 K and ≤ 120 K), and then keeps unchanged, which is attributed to the influence of negative vacancies and detrapping of the positron from those negative ions of Mg, Zn, Ag, and Ca with ionization level (1-).
Key words ：
61.72.Ji
78.70.Bj
71.55.Eq
出版日期: 2001-04-01
引用本文:
MAO Wei-Dong;WANG Shao-Jie;WANG Zhu;SUN Nie-Feng;SUN Tong-Nian;ZHAO You-Wen. Identification of Defects in Undoped Semi-insulating InP
by Positron Lifetime[J]. 中国物理快报, 2001, 18(4): 574-576.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I4/574
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