A Silicon-Based Ferroelectric Capacitor for Memory Devices
REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian, LI Zhi-Jian
Institute of Microelectronics, Tsinghua University, Beijing 100084
A Silicon-Based Ferroelectric Capacitor for Memory Devices
REN Tian-Ling;ZHANG Lin-Tao;LIU Li-Tian;LI Zhi-Jian
Institute of Microelectronics, Tsinghua University, Beijing 100084
关键词 ：
85.50.+k ,
77.84.-s
Abstract ： We study a silicon-based PbTiO3 /Pb(Zr0.53 Ti0.47 )O3 /PbTiO3 capacitor, prepared by an improved sol-gel method. The ferroelectric capacitor, with high remanent polarization of 15μC/cm2 at a coercive field of about 30kV/cm, an ultra-low leakage current density of 0.1nA/cm2 , and almost fatigue free properties, It can be used as a promising candidate for ferroelectric memory devices.
Key words ：
85.50.+k
77.84.-s
出版日期: 2002-03-01
:
85.50.+k
77.84.-s
(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
引用本文:
REN Tian-Ling;ZHANG Lin-Tao;LIU Li-Tian;LI Zhi-Jian. A Silicon-Based Ferroelectric Capacitor for Memory Devices[J]. 中国物理快报, 2002, 19(3): 432-433.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I3/432
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