A New Silicon-Based Ferroelectric Sandwich Structure
REN Tian-Ling, ZHANG Lin-Tao, LIU Li-Tian, LI Zhi-Jian
Institute of Microelectronics, Tsinghua University, Beijing 100084
A New Silicon-Based Ferroelectric Sandwich Structure
REN Tian-Ling;ZHANG Lin-Tao;LIU Li-Tian;LI Zhi-Jian
Institute of Microelectronics, Tsinghua University, Beijing 100084
关键词 ：
85.50.+k ,
84.-s
Abstract ： A new silicon-based PbTiO3 /Pb(Zr0.53 Ti0.47 )O3 /PbTiO3 sandwich structure is fabricated by a sol--gel method. Compared with other fabrication processes without PbTiO3 buffer layers, the annealing temperature is greatly reduced by as much as 100°C. Capacitance--voltage, polarization--electric field and dielectric--frequency properties of this sandwich structure are studied. The Pb(Zrx Ti1-x )O3 films are proved to have good dielectric and ferroelectric properties.
Key words ：
85.50.+k
84.-s
出版日期: 2001-01-01
:
85.50.+k
77
(Dielectrics, piezoelectrics, and ferroelectrics and their properties)
84.-s
引用本文:
REN Tian-Ling;ZHANG Lin-Tao;LIU Li-Tian;LI Zhi-Jian
. A New Silicon-Based Ferroelectric Sandwich Structure
[J]. 中国物理快报, 2001, 18(1): 132-133.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I1/132
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