Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell
HE Chun-Yuan1, GAO Chun-Xiao1, LI Ming1, HAO Ai-Min 1,2, HUANG Xiao-Wei1, ZHANG Dong-Mei1, YU Cui-Ling1, WANG Yue
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 1300122Department of Mathematics and Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004
Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 1300122Department of Mathematics and Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004
摘要In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33GPa. The abnormal resistivity changes at about 3.8GPa and 10GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5GPa, 15.5GPa, 22.2GPa and about 30GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3GPa.
Abstract：In situ resistivity measurement has been performed to investigate the electron transport property of powered CdTe under high pressure and moderate temperature in a designed diamond anvil cell. Several abnormal resistivity changes can be found at room temperature when the pressure increases from ambient to 33GPa. The abnormal resistivity changes at about 3.8GPa and 10GPa are caused by the structural phase transitions to the rock-salt phase and to the Cmcm phase, respectively. The other abnormal resistivity changes at about 6.5GPa, 15.5GPa, 22.2GPa and about 30GPa never observed before are due to the electronic phase transitions of CdTe. The origin of the abnormal change occurred at about 6.5GPa is discussed. The temperature dependence of the resistivity of CdTe shows its semiconducting behaviour at least before 11.3GPa.
HE Chun-Yuan;GAO Chun-Xiao;LI Ming;HAO Ai-Min;HUANG Xiao-Wei;ZHANG Dong-Mei;YU Cui-Ling;WANG Yue. Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell[J]. 中国物理快报, 2007, 24(4): 1070-1072.
HE Chun-Yuan, GAO Chun-Xiao, LI Ming, HAO Ai-Min, HUANG Xiao-Wei, ZHANG Dong-Mei, YU Cui-Ling, WANG Yue. Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell. Chin. Phys. Lett., 2007, 24(4): 1070-1072.
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