2007, Vol. 24(4): 1070-1072    DOI:
Electron Transport Property of CdTe under High Pressure and Moderate Temperature by In-Situ Resistivity Measurement in Diamond Anvil Cell
HE Chun-Yuan1, GAO Chun-Xiao1, LI Ming1, HAO Ai-Min 1,2, HUANG Xiao-Wei1,
ZHANG Dong-Mei1, YU Cui-Ling1, WANG Yue
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 1300122Department of Mathematics and Physics, Hebei Normal University of Science and Technology, Qinhuangdao 066004
收稿日期 2006-11-15  修回日期 1900-01-01
Supporting info

[1] Nelmes R J et al 1993 Phys. Rev. B 48 1314

[2] McMahon M I et al 1993 Phys. Rev. B 48 16246

[3] Nelmes R J et al 1995 Phys. Rev. B 51 15723

[4] Edwards A L and Drickamer H G 1961 Phys. Rev. 122 1149

[5] Dunstan D J and Gil B 1988 Phys. Rev. B 38 7862

[6] GONZALEZ J et al 1995 J. Phys. Chem. Solids 56 325

[7] Mei J R and Lemos V 1984 Solid State Commun. 52 785

[8] G\"uder H S et al 2003 Phys. Status Solidi B 235 509

[9] Balchan A S and Drickamer H G 1999 Revi. Sci. Instru.
31 511

[10]Segura A and Sans J A 2005 Joint 20th AIRAPT: 43th EHPRG
(from 27 June to 1 July 2005, Karlsruhe, Germany)

[11] Samara G A and Drickamer H G 1962 J. Phys. Chem. Solids
23 457

[12] Minomura S, Samara G A and Drickamer H G 1962 J. Appl. Phys.
33 3196

[13] Han Y H et al 2005 Chin. Phys. Lett. 22 927