Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure
LUO Ke-jian, ZHENG Hou-zhi, ZHANG Ting, LI Cheng-fang, YANG Xiao-ping, ZHANG Peng-hua, ZHANG Wei, TIAN Jin-fa
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure
LUO Ke-jian;ZHENG Hou-zhi;ZHANG Ting;LI Cheng-fang;YANG Xiao-ping;ZHANG Peng-hua;ZHANG Wei;TIAN Jin-fa
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
关键词 ：
73.40.Gk ,
72.20.Jv ,
72.80.Ey
Abstract ： Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy. Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime, while it increases remarkably with bias voltages beyond resonant regime. The optical results are in good agreement with the electrical measurement. It is demonstrated that the band gap renormalization plays a certain role in the experiment.
Key words ：
73.40.Gk
72.20.Jv
72.80.Ey
出版日期: 1996-09-01
:
73.40.Gk
(Tunneling)
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
72.80.Ey
(III-V and II-VI semiconductors)
引用本文:
LUO Ke-jian;ZHENG Hou-zhi;ZHANG Ting;LI Cheng-fang;YANG Xiao-ping;ZHANG Peng-hua;ZHANG Wei;TIAN Jin-fa. Photoluminescence Investigation of Charge Build-Up Process in the Emitter of a Double-Barrier Resonant Tunneling Structure
[J]. 中国物理快报, 1996, 13(9): 707-710.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1996/V13/I9/707
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