Relaxation of Dense Electron Plasma Induced by Femtosecond Laser in Dielectric Materials
SUN Quan, JIANG Hong-Bing, LIU Yi, ZHOU Yong-Heng, YANG Hong, GONG Qi-Huang
State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871
Relaxation of Dense Electron Plasma Induced by Femtosecond Laser in Dielectric Materials
SUN Quan;JIANG Hong-Bing;LIU Yi;ZHOU Yong-Heng;YANG Hong;GONG Qi-Huang
State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871
关键词 :
72.20.Jv ,
52.38.Dx ,
52.70.Kz ,
52.20.Fs
Abstract : Electron plasma induced by a focused femtosecond pulse (130fs, 800nm) in dielectric materials (Soda Lime glass, K9 glass, and SiO2 crystal) is investigated by pump-probe shadow imaging technology. The relaxation of the electron plasma in the conduction band is discussed. In SiO2 crystals, a fast self-trapping process with a trapping time of 150fs is observed, which is similar to that in fused silica. However, in Soda Lime glass and K9 glass, no self-trapping occurs, and two decay processes are found: one is the energy relaxation process of conduction electrons within several picoseconds, another is an electron-hole recombination process with a timescale of 100ps. The electron collision time τ in the conduction band is also measured to be in the order of 1fs in all of these materials.
Key words :
72.20.Jv
52.38.Dx
52.70.Kz
52.20.Fs
出版日期: 2006-01-01
:
72.20.Jv
(Charge carriers: generation, recombination, lifetime, and trapping)
52.38.Dx
(Laser light absorption in plasmas (collisional, parametric, etc.))
52.70.Kz
(Optical (ultraviolet, visible, infrared) measurements)
52.20.Fs
(Electron collisions)
引用本文:
SUN Quan;JIANG Hong-Bing;LIU Yi;ZHOU Yong-Heng;YANG Hong;GONG Qi-Huang. Relaxation of Dense Electron Plasma Induced by Femtosecond Laser in Dielectric Materials[J]. 中国物理快报, 2006, 23(1): 192-192.
SUN Quan, JIANG Hong-Bing, LIU Yi, ZHOU Yong-Heng, YANG Hong, GONG Qi-Huang. Relaxation of Dense Electron Plasma Induced by Femtosecond Laser in Dielectric Materials. Chin. Phys. Lett., 2006, 23(1): 192-192.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2006/V23/I1/192
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