Photocurrent Studies of β-FeSi2 Thin Films
SHEN Wenzhong1 , WANG Lianwei2 , TANG Wenguo1 , LI Ziyuan1 , SHEN Xuechu1
1 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
Photocurrent Studies of β-FeSi2 Thin Films
SHEN Wenzhong1 ;WANG Lianwei2 ;TANG Wenguo1 ;LI Ziyuan1 ;SHEN Xuechu1
1 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083
2 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050
关键词 ：
68.55.Eg ,
78.60.Fi
Abstract ： We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions β-FeSi2 and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of β-FeSi2 . The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.
Key words ：
68.55.Eg
78.60.Fi
出版日期: 1995-01-01
引用本文:
SHEN Wenzhong;WANG Lianwei;TANG Wenguo;LI Ziyuan;SHEN Xuechu. Photocurrent Studies of β-FeSi2 Thin Films[J]. 中国物理快报, 1995, 12(1): 34-37.
2 Thin Films. Chin. Phys. Lett., 1995, 12(1): 34-37.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1995/V12/I1/34
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1995, Vol. 12 
