Recombination Efficiency in Double-Layer Organic Light-Emitting Devices
XU Xue-Mei1,2 , PENG Jing-Cui1 , QU Shu1 , LI Hong-Jian1 , WU Jian-Hao2 , OU-Yang Yu1
1 Department of Applied Physics, Hunan University, Changsha 410082
2 School of Physics Science and Technology, Central South University, Changsha 410083
Recombination Efficiency in Double-Layer Organic Light-Emitting Devices
XU Xue-Mei1,2 ;PENG Jing-Cui1 ;QU Shu1 ;LI Hong-Jian1 ;WU Jian-Hao2 ;OU-Yang Yu1
1 Department of Applied Physics, Hunan University, Changsha 410082
2 School of Physics Science and Technology, Central South University, Changsha 410083
关键词 ：
78.60.Fi ,
78.20.-e ,
78.66.Qn ,
85.60.Jb
Abstract ： We analyse the influence of properties of organic/organic interface (OOI) on the characteristics of recombination efficiency of organic double-layer light-emitting diodes. Based on the disordered hopping theory model, spatial and energetic disorder of hopping states are also discussed for the case of space charge limited currents in hole transmitting layers but injection-limited currents in electron transporting layers. The results show that the recombination efficiency increases firstly and then decreases for different OOI parameters, and there is a maximum value changed with different spatial disorder parameters and energetic disorder scale. Different spatial disorder parameters make carrier mobilities change greatly, and the energetic disorder scale causes various localized state densities. Our calculated results are qualitatively in agreement with the experimental data.
Key words ：
78.60.Fi
78.20.-e
78.66.Qn
85.60.Jb
出版日期: 2005-03-01
:
78.60.Fi
(Electroluminescence)
78.20.-e
(Optical properties of bulk materials and thin films)
78.66.Qn
(Polymers; organic compounds)
85.60.Jb
(Light-emitting devices)
引用本文:
XU Xue-Mei;PENG Jing-Cui;QU Shu;LI Hong-Jian;WU Jian-Hao;OU-Yang Yu. Recombination Efficiency in Double-Layer Organic Light-Emitting Devices[J]. 中国物理快报, 2005, 22(3): 719-722.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2005/V22/I3/719
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2005, Vol. 22 
