Realization of Low Threshold of InGaAs/InAlAs Quantum Cascade
Laser
LI Cheng-Ming, LIU Feng-Qi, JIN Peng, WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Realization of Low Threshold of InGaAs/InAlAs Quantum Cascade
Laser
LI Cheng-Ming;LIU Feng-Qi;JIN Peng;WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
32.30.Rj ,
42.55.Px ,
81.15.Hi
Abstract ： By optimizing the molecule beam epitaxy growth condition, the quality of quantum cascade (QC) material has greatly been improved. The spectrum of double x-ray diffraction indicates that the interface between the constituent layers is very smooth, the lattice mismatch between the epilayer and the substrate is less than 0.1%, and the periodicity fluctuation of the active region is not more than 4.2%. The QC laser with the emission wavelength of about 5.1μm is operated at the threshold of 0.73kA/cm2 at liquid nitrogen temperature with the repetition rate of 10 kHz and at a duty cycle of 1%. Meanwhile, the performance of the laser can be improved with suitable post process techniques such as the metallic ohmic contact technology.
Key words ：
32.30.Rj
42.55.Px
81.15.Hi
出版日期: 2003-09-01
:
32.30.Rj
(X-ray spectra)
42.55.Px
(Semiconductor lasers; laser diodes)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
引用本文:
LI Cheng-Ming;LIU Feng-Qi;JIN Peng;WANG Zhan-Guo. Realization of Low Threshold of InGaAs/InAlAs Quantum Cascade
Laser[J]. 中国物理快报, 2003, 20(9): 1478-1481.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I9/1478
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