Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE
ZHANG Bin1, YAO Shu-De1, WANG Kun1, DING Zhi-Bo1, CHEN Zhi-Tao2, SU Yue-Yong2, ZHANG Guo-Yi2, MA Hong-Ji1, NIE Rui1, ZHANG Ya-Wei1
1Department of Technical Physics, School of Physics, Peking University, Beijing 100871
2Department of Physics, School of Physics, Peking University, Beijing 100871
Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE
1Department of Technical Physics, School of Physics, Peking University, Beijing 100871
2Department of Physics, School of Physics, Peking University, Beijing 100871
Abstract： The diluted magnetic semiconductor Ga1-xMnxN was achieved by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE). Proton-induced x-ray emission was employed non-destructively, quickly and accurately to determine the Mn-doped content. The magnetic property was measured by a superconducting-quantum-interference-device (SQID) magnetometer. Apparent ferromagnetic hysteresis loops measured at or above room temperature are presented. No ferromagnetic secondary phases were detected by high-resolution x-ray diffraction. The experimental results show that the ferromagnetic signal firstly decreases and then increases with the increasing Mn-doped content from 0.23% to 4.69% and it is the weakest when Mn content is 0.51%. The annealing treatment could make the ferromagnetic property stronger.
ZHANG Bin;YAO Shu-De;WANG Kun;DING Zhi-Bo;CHEN Zhi-Tao;SU Yue-Yong;ZHANG Guo-Yi;MA Hong-Ji;NIE Rui;ZHANG Ya-Wei. Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE[J]. 中国物理快报, 2006, 23(6): 1585-1587.
ZHANG Bin, YAO Shu-De, WANG Kun, DING Zhi-Bo, CHEN Zhi-Tao, SU Yue-Yong, ZHANG Guo-Yi, MA Hong-Ji, NIE Rui, ZHANG Ya-Wei. Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE. Chin. Phys. Lett., 2006, 23(6): 1585-1587.
2006, Vol. 23 
