Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors
WANG Wei-Hua1,2, ZOU Liang-Jian1
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
2Graduate School of the Chinese Academy of Sciences, Beijing 100049
Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors
WANG Wei-Hua1,2;ZOU Liang-Jian1
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, PO Box 1129, Hefei 230031
2Graduate School of the Chinese Academy of Sciences, Beijing 100049
Abstract： The electronic and magnetic properties as well as the spatial charge distribution of single Mn impurity in III--V diluted magnetic semiconductors are obtained when the degeneracy of the p orbits contributed from the four nearest-neighbouring As(N) atoms is taken into account. We show that in the ground state, the Mn spin is strongly antiferromagnetically coupled to the surrounding As(N) atoms when the p-d hybridization Vpd is large and both the hole level Ev and the impurity level Ed are close to the Fermi energy. The spatial charge distribution of the Mn acceptor in the (110) plane is non-spherically symmetric, in good agreement with the recent STM images.
WANG Wei-Hua;ZOU Liang-Jian. Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors[J]. 中国物理快报, 2006, 23(6): 1588-1591.
WANG Wei-Hua, ZOU Liang-Jian. Electronic States and Spatial Charge Distribution of Single Mn Impurity in Diluted Magnetic Semiconductors. Chin. Phys. Lett., 2006, 23(6): 1588-1591.
2006, Vol. 23 
