Self-Organized InAs Quantum Wires on GaAs (331)A Substrates
GONG Zheng, FANG Zhi-Dan, MIAO Zhen-Hua, NIU Zhi-Chuan, FENG Song-Lin
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
Self-Organized InAs Quantum Wires on GaAs (331)A Substrates
GONG Zheng; FANG Zhi-Dan; MIAO Zhen-Hua;NIU Zhi-Chuan;FENG Song-Lin
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
关键词 ：
68.55.Jk ,
81.10.Aj ,
81.15.Hi ,
07.79.Lh
Abstract ： Self-organized InAs quantum wires (QWRs) were fabricated on the step edges of the GaAs (331)A surface by molecular beam epitaxy. The lateral size of InAs QWRs was saturated by the terrace width (i.e., 90 nm) while the size along the step lines increased with the increasing thicknesses of the InAs layers, up to 1100 nm. The height of InAs QWRs varied from 7. nm to 13 nm. The evolution of the morphology of InAs QWRs was attributed to the diffusion anisotropy of In adatoms.
Key words ：
68.55.Jk
81.10.Aj
81.15.Hi
07.79.Lh
出版日期: 2003-10-01
:
68.55.Jk
81.10.Aj
(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
81.15.Hi
(Molecular, atomic, ion, and chemical beam epitaxy)
07.79.Lh
(Atomic force microscopes)
引用本文:
GONG Zheng; FANG Zhi-Dan; MIAO Zhen-Hua;NIU Zhi-Chuan;FENG Song-Lin. Self-Organized InAs Quantum Wires on GaAs (331)A Substrates[J]. 中国物理快报, 2003, 20(10): 1819-1821.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2003/V20/I10/1819
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