Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications
FU Di1,2, XIE Dan1,2, ZHANG Chen-Hui3, ZHANG Di1,2, NIU Jie-Bin4, QIAN He1,2, LIU Li-Tian1,2
1Institute of Microelectronics, Tsinghua University, Beijing 100084 2Tsinghua National Laboratory for Information Science and Technology, Beijing 100084 3State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 4Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications
FU Di1,2, XIE Dan1,2, ZHANG Chen-Hui3, ZHANG Di1,2, NIU Jie-Bin4, QIAN He1,2, LIU Li-Tian1,2
1Institute of Microelectronics, Tsinghua University, Beijing 100084 2Tsinghua National Laboratory for Information Science and Technology, Beijing 100084 3State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 4Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
We propose diamond-like carbon (DLC) as the resistance change material for nonvolatile memory applications. Nanoscale DLC films are prepared by filtered cathodic vacuum arc technique and integrated to W/DLC/W structure devices. The deposited DLC film has a thickness of about 20 nm and high sp3 fraction content. Reversible bistable resistive switching from a high resistance state to a low resistance state, and vice versa, is observed under appropriate unipolar stimulation pulses. High resistance switching ratio (larger than a thousand times) and low level of switching power (about 11 μW) are demonstrated. We propose that the mechanism of the repetitive resistive switching is the growth and breakage of conductive sp2-like filaments in the predominantly sp3-type insulating carbon upon applications of voltage pulses, which is consistent with the experimental results.
We propose diamond-like carbon (DLC) as the resistance change material for nonvolatile memory applications. Nanoscale DLC films are prepared by filtered cathodic vacuum arc technique and integrated to W/DLC/W structure devices. The deposited DLC film has a thickness of about 20 nm and high sp3 fraction content. Reversible bistable resistive switching from a high resistance state to a low resistance state, and vice versa, is observed under appropriate unipolar stimulation pulses. High resistance switching ratio (larger than a thousand times) and low level of switching power (about 11 μW) are demonstrated. We propose that the mechanism of the repetitive resistive switching is the growth and breakage of conductive sp2-like filaments in the predominantly sp3-type insulating carbon upon applications of voltage pulses, which is consistent with the experimental results.
(Metal-insulator transitions and other electronic transitions)
引用本文:
FU Di;XIE Dan;ZHANG Chen-Hui;ZHANG Di;NIU Jie-Bin;QIAN He;LIU Li-Tian;. Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications[J]. 中国物理快报, 2010, 27(9): 98102-098102.
FU Di, XIE Dan, ZHANG Chen-Hui, ZHANG Di, NIU Jie-Bin, QIAN He, LIU Li-Tian,. Preparation and Characteristics of Nanoscale Diamond-Like Carbon Films for Resistive Memory Applications. Chin. Phys. Lett., 2010, 27(9): 98102-098102.
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2010, Vol. 27 
