We report a thin film electroluminescent device with a three-layer structure (diamond/CeF3/SiO2 films), which has a luminance of 1.5 cd/m2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593 nm, which are attributed to isolated emission centers of Ce3+ ions.
We report a thin film electroluminescent device with a three-layer structure (diamond/CeF3/SiO2 films), which has a luminance of 1.5 cd/m2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593 nm, which are attributed to isolated emission centers of Ce3+ ions.
[1] Zaitsev A M 2001 Optical Properties of Diamonds: A Data Handbook (Berlin: Springer) [2] Collins S T, Kamo M and Sato Y 1990 J. Mater. Res. 5 2507 [3] Bai S Y, Tang Z A,Huang Z X, Yu J,Wang J and Liu G C 2009 Chin. Phys. Lett. 26 076601 [4] Li H D, Zou G T,Wang Q L, Cheng S H, Li B, LÜJ N, LÜ X Y and Jin Z S 2008 Chin. Phys. Lett. 25 1803 [5]Shi C S, Deng J, Wei Y G, Zhang G B, Zimmerer G, Becker J, Shen D Z and Hu G Q 2000 Chin. Phys. Lett. 17 532 [6] Auffray E et al 1996 Nucl. Instrum. Methods Phys. Res. A 378 171 [7] Vaneijk C W E 2001 Nucl. Instrum. Methods Phys. Res. A 460 1 [8] Moses W W and Derenzo S E 1990 Nucl. Instrum. Methods Phys. Res . A 299 51 [9] Shimamura K, Víllora E G,Nakakita S, Nikl M and Ichinose N 2004 J. Cryst. Growth 264 208 [10] Chai R T, Lian H Z, Li C X, Cheng Z Y, Hou Z Y, Huang S S and Lin J 2009 J. Phys. Chem. C 113 8070 [11] Li C X, Liu X M, Yang P P, Zhang C M, Lian H Z and Lin J 2008 J. Phys. Chem. C 112 2904 [12] Zhu L, Li Q, Liu X D, Li J Y, Zhang Y F, Meng J and Cao X Q 2007 J. Phys. Chem. C 111 5898 [13] Wang Z L, Quan Z W, Jia P Y Lin C K, Luo Y, Chen Y, Fang J, Zhou W, Connor C J O and Lin J 2006 Chem. Mater. 18 2030 [14] Tanaka K, Inoue Y, Okamoto S, Kobayashi K and Takizawa K 1997 Jpn. J. Appl. Phys. 36 3517 [15] Okamoto K and Hanaoka K 1988 Jpn. J. Appl. Phys. 27 L1923 [16] Sohn S H and Hamakawa Y 1992 Jpn. J. Appl. Phys. 31 3901 [17] Kodama N, Yamaga M and Henderson B 1998 J. Appl. Phys. 84 5820 [18] Wang X P, Wang L J, Zhang B L,Yao N, Liang E J, Zhang L, Ma H Z, Cheng G P, Wang J E, Li G T, Li W Q, Yang S E and Bian C 2003 Semicond. Sci. Technol. 18 144 [19] Vercaemst R, Poelman D, Van Meirhaeghe R L, Fiermans L, Laflere W H and Cardon F 1995 J. Lumin. 63 19 [20] Tanaka K, Ohgoh T, Kimura K, Yamamoto H, Shinagawa K and Sato K 1995 Japan. J. Appl. Phys. 34 L1651 [21] Tanaka D, Inoue Y and Okamoto S 1997 Jpn. J. Appl. Phys. 36 3517 [22] Wei Y G, Shi C S, Qi Z M, Wang Z, Tao Y and Wang W 2001 Chin. J. Lumin. 22 243 (in Chinese)
2010, Vol. 27 
