Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy
HUANG Hai-Chao1,2, WANG Hai-Bo1,2, YAN Dong-Hang1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 2Graduate School of Chinese Academy of Sciences, Beijing 100049
Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy
HUANG Hai-Chao1,2, WANG Hai-Bo1,2, YAN Dong-Hang1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 2Graduate School of Chinese Academy of Sciences, Beijing 100049
We investigate the heterojunction effect between para-sexiphenyl (p-6P) and copper phthalocyanine (CuPc) using Kelvin probe force microscopy. CuPc films are grown on the inducing layer p-6P by a weak epitaxy growth technique. The surface potential images of Kelvin probe force microscopy indicate the band bending in CuPc, which reduces grain boundary barriers and lead to the accumulation of holes in the CuPc layer. The electrical potential distribution on the surface of heterojunction films shows negligible grain boundary barriers in the CuPc layers. The relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed.
We investigate the heterojunction effect between para-sexiphenyl (p-6P) and copper phthalocyanine (CuPc) using Kelvin probe force microscopy. CuPc films are grown on the inducing layer p-6P by a weak epitaxy growth technique. The surface potential images of Kelvin probe force microscopy indicate the band bending in CuPc, which reduces grain boundary barriers and lead to the accumulation of holes in the CuPc layer. The electrical potential distribution on the surface of heterojunction films shows negligible grain boundary barriers in the CuPc layers. The relation between band bending and grain boundary barrier in the weak epitaxy growth thin films is revealed.
HUANG Hai-Chao;WANG Hai-Bo;YAN Dong-Hang. Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy[J]. 中国物理快报, 2010, 27(8): 86801-086801.
HUANG Hai-Chao, WANG Hai-Bo, YAN Dong-Hang. Heterojunction Effect in Weak Epitaxy Growth Thin Films Investigated by Kelvin Probe Force Microscopy. Chin. Phys. Lett., 2010, 27(8): 86801-086801.
[1] Horowitz G and Hajlaoui M E 2000 Adv. Mater. 12 1046 [2] Wang H B, Zhu F, Yang J L, Geng Y H and Yan D H 2007 Adv. Mater. 19 2168 [3] Yang J L, Wang T, Wang H B, Zhu F, Li G and Yan D H 2008 J. Phys. Chem. B 112 3132 [4] Wang T, Ebeling D, Yang J L, Du C A, Chi L F, Fuchs H and Yan D H 2009 J. Phys. Chem. B 113 2333 [5] Wang T, Yang J, Wang H B, Zhu F and Yan D H 2008 J. Phys. Chem. B 112 6786 [6] Yang J L, Wang T, Wang H B, Zhu F, Li G and Yan D H 2008 J. Phys. Chem. B 112 7816 [7] Yang J L, Wang T, Wang H B, Zhu F, Li G and Yan D H 2008 J. Phys. Chem. B 112 7821 [8] Yang J L and Yan D H 2009 Chem. Soc. Rev. 38 2634 [9] Wang H B, Liu Z, Ng T W, Lo M F, Lee C S, Yan D H and Lee S T 2010 Appl. Phys. Lett. 96 173303 [10] Wang H B, Wang X J, Huang H C and Yan D H 2008 Appl. Phys. Lett. 93 103307 [11] Huang H C, Wang H B, Zhang J D and Yan D H 2009 Appl. Phys. A: Mater. Sci. Process. 95 125 [12] Cahen D and Kahn A 2003 Adv. Mater. 15 271 [13] Horowitz G 2003 Adv. Func. Mater. 13 53 [14] Verlaak S, Arkhipov V and Heremans P 2003 Appl. Phys. Lett. 82 745
2010, Vol. 27 
