Strain-Driven Formation of Nanostripes on In/Si(113) Surface
XU Mao-Jie1, DOU Xiao-Ming2,1
1Department of Physics, Shanghai Jiao Tong University, Shanghai 200240 2School of Optical-electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093
Strain-Driven Formation of Nanostripes on In/Si(113) Surface
XU Mao-Jie1, DOU Xiao-Ming2,1
1Department of Physics, Shanghai Jiao Tong University, Shanghai 200240 2School of Optical-electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093
Periodic nanostripe arrays are observed on In/Si(113) surface using scanning tunneling microscopy. The stripe superstructures are identified as N×1 reconstructions elongating in [21 1] or [121] direction and consisting of one vacancy line, one Si adatom row, and N-2 In rows, in which N=5 is predominant. The vacancy line formation relieves the strain induced by the Si adatom row and In rows, and plays an important role in stabilizing the stripe structures. The stability of nanostripe structures is demonstrated by analyzing the strain-mediated interaction of vacancy lines in the framework of the Frenkel-Kontorova model, which indicates that the predominant vacancy line period of N=5 corresponds to the minimum Frenkel-Kontorova energy.
Periodic nanostripe arrays are observed on In/Si(113) surface using scanning tunneling microscopy. The stripe superstructures are identified as N×1 reconstructions elongating in [21 1] or [121] direction and consisting of one vacancy line, one Si adatom row, and N-2 In rows, in which N=5 is predominant. The vacancy line formation relieves the strain induced by the Si adatom row and In rows, and plays an important role in stabilizing the stripe structures. The stability of nanostripe structures is demonstrated by analyzing the strain-mediated interaction of vacancy lines in the framework of the Frenkel-Kontorova model, which indicates that the predominant vacancy line period of N=5 corresponds to the minimum Frenkel-Kontorova energy.
[1] Barth J V, Brune H, Ertl G and Behm R J 1990 Phys. Rev. B 42 9307 [2] Narasimhan S and Vanderbilt D 1992 Phys. Rev. Lett. 69 1564 [3] Robinson I K, Waskiewicz W K, Fuoss P H and Norton L J 1988 Phys. Rev. B 37 4325 [4] Meade R D and Vanderbilt D 1989 Phys. Rev. B 40 3905 [5] Brune H, Röder H, Boragno C and Kern K 1994 Phys. Rev. B 49 2997 [6] Chambliss D D, Wilson R J and Chiang S 1991 Phys. Rev. Lett. 66 1721 [7] Brune H, Giovannini M, Bromann K and Kern K 1998 Nature 394 451 [8] Li J L, Jia J F, Liang X J, Liu X, Wang J Z, Xue Q K, Li Z Q, Tse J S, Zhang Z and Zhang S B 2002 Phys. Rev. Lett. 88 066101 [9] Omi H and Ogino T 1997 Appl. Phys. Lett. 71 2163 [10] Zhang Z, Sumitomo K, Nakamura J, Omi H, Natori A and Ogino T 2002 Phys. Rev. Lett. 88 256101 [11] Dabrowski J, Müssig H J and Wolff G 1994 Phys. Rev. Lett. 73 1660 [12] Hibino H and Ogino T 1997 Phys. Rev. B 56 4092 [13] An K S, Hwang C C, Park R J, Lee J B, Kim J S, Park C Y, Lee S B, Kimura A and Kakizaki A 1997 Jpn. J. Appl. Phys. 36 2833 [14] An K S, Hwang C C, Park R J and Kakizaki A 1997 Jpn. J. Appl. Phys. 39 2771 [15] Suzuki H, Nakahara H, Miyata S and Ichimiya A 2001 Surf. Sci. 493 166 [16] Gai Z, Zhao R G, Gao B, Ji H and Yang W S 1997 Surf. Sci. 383 1 [17] Mizuno S, Mizuno Y O and Tochihara H 2003 Phys. Rev. B 67 195410 [18] Meade R D and Vanderbilt D 1989 Phys. Rev. Lett. 63 1404 [19] Erwin S C, Baski A A, Whitman L J and Rudd R E 1999 Phys. Rev. Lett. 83 1818 [20] Xu H B, Wang G R and Chen S G 2000 Chin. Phys. 9 611 [21] Baski A A, Erwin S C and Whitman L J 1999 Surf. Sci. 423 L265
2010, Vol. 27 
