Surface Structure and Electronic Property of InP(001)-(2×1)S Surface: A First-Principles Study
LI Deng-Feng1,2, XIAO Hai-Yan2, XUE Shu-Wen2, YANG Li2, ZU Xiao-Tao2
1Department of Mathematics and Physics, Chongqing Universityof Posts and Telecommunications, Chongqing 4000652Department of Applied Physics, University of Electronic Science andTechnology of China, Chengdu 610054
Surface Structure and Electronic Property of InP(001)-(2×1)S Surface: A First-Principles Study
LI Deng-Feng1,2, XIAO Hai-Yan2, XUE Shu-Wen2, YANG Li2, ZU Xiao-Tao2
1Department of Mathematics and Physics, Chongqing Universityof Posts and Telecommunications, Chongqing 4000652Department of Applied Physics, University of Electronic Science andTechnology of China, Chengdu 610054
The surface structure and electronic property of InP(001)-(2×1)S surface under S-rich condition are investigated based on first-principles simulations. The analyses of phase transition show that the 3B model is the most stable structure and the S-S dimer is difficult to form. The geometry of the 3B structure agrees well with the experiments. It is also found that the 3B structure has a good passivation with a band gap of about 1.24eV. The results indicate that the 3B structure is the best candidate for the sulfur-rich InP(001)(2×1)A phase.
The surface structure and electronic property of InP(001)-(2×1)S surface under S-rich condition are investigated based on first-principles simulations. The analyses of phase transition show that the 3B model is the most stable structure and the S-S dimer is difficult to form. The geometry of the 3B structure agrees well with the experiments. It is also found that the 3B structure has a good passivation with a band gap of about 1.24eV. The results indicate that the 3B structure is the best candidate for the sulfur-rich InP(001)(2×1)A phase.
LI Deng-Feng;XIAO Hai-Yan;XUE Shu-Wen;YANG Li;ZU Xiao-Tao. Surface Structure and Electronic Property of InP(001)-(2×1)S Surface: A First-Principles Study[J]. 中国物理快报, 2010, 27(4): 46802-046802.
LI Deng-Feng, XIAO Hai-Yan, XUE Shu-Wen, YANG Li, ZU Xiao-Tao. Surface Structure and Electronic Property of InP(001)-(2×1)S Surface: A First-Principles Study. Chin. Phys. Lett., 2010, 27(4): 46802-046802.
[1] Essolov V N and Lebedev M V 1998 Semiconductors 32 1141 [2] Tian Z et al 1997 Phys. Rev . B 55 5376 [3] Ferraz A C and Srivastava G P1997 Surf. Sci. 377--379 121 [4] Jin J -M, Dharma-wardana M W C, Lockwood D J, Aers G C, Lu Z H and Lewis L J 1995 Phys. Rev. Lett. 75 878 [5] Shimomura M, Sanada N, Ichikawa S and Fukuda Y 1998 J. Appl. Phys. 83 3071 [6] Gebhardt R K, Preobrajenski A B and Chasse T 2000 Phys. Rev. B 61 9997 [7] Oigawa H, Fan Jia-Fa., Nannichi Y, Sugahara H and Oshima M 1991 Jpn. J. Appl. Phys. 27 L322 [8] Gallet D and Hollinger G 1993 Appl. Phys. Lett . 62 982 [9] Fukuda Y, Suzuki Y, Sanada N., Sasaki S and Ohsawa T 1994 J. Appl. Phys. 76 3059 [10] Shimomura M, Naka K, Sanada N, Suzuki Y and Fukuda Y 1996 J. Appl. Phys. 79 4193 [11] Ferraz A C et al 1999 Appl. Surf. Sci. 142 23 [12] Engler C, Dittmar J and Chasse T 2001 Surf. Sci. 495 55 [13] Preobrajenski A B, Gebhardt R K, Uhlig I and Chassé T 2001 Surf. Sci. 481 1 [14] Gundel S and Faschinger W 1999 Phys. Rev. B 59 5602 [15] Kohn W and Shan L J 1965 Phys. Rev. 140 A1133 [16] Li J B, Carrier P, Wei S H, Li S S and Xia J B 2006 Phys. Rev. Lett. 96 035505 [17] Xie D Q, Lu Y H et al 2001 Chem. Phys. Lett. 339 14 [18] Zhang Y F, Ding K N, Lin W and Li J Q 2005 Acta Phys. Sin. 54 1352 (in Chinese) [19] Zeng Z H, deng H Q, Li W X and Hu W Y 2006 Acta Phys. Sin. 55 3158 (in Chinese) [20] Li D F, Xiao H Y, Zu X T and Dong H N 2007 Mater. Sci. Eng. A 460--461 50 [21] Tang Z, Yang S Y et al 2008 Chin. Phys. Lett. 25 2977 [22] Kresse G and Joubert J 1999 Phys. Rev. B 59 1758 [23] K.Shiraishi 1990 J. Phys. Soc. Jpn. 59 3455 [24] Neugebauer J and Scheffler M 1992 Phys. Rev. B 46 16067 [25] Qian G X, Martin R M and Chadi D J 1988 Phys. Rev. B 38 7649 [26] Gonzalez C, Benito I, Ortega J, Jurczyszyn L, Blanco J M, Perez R, Flores F, Kampen T U, Zahn D R T and Braun W 2004 J. Phys.: Condens. Matter. 16 2187