Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates
ZHU Pei-ran1, S. Yamamoto2, A. Miyashita2, H. Naramoto2
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Department of Materials Development, Japan Atom Energy Research Institute, Watanuki 1233, Takasaki, Gumma 370-12, Japan
Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates
1Institute of Physics, Chinese Academy of Sciences, Beijing 100080
2Department of Materials Development, Japan Atom Energy Research Institute, Watanuki 1233, Takasaki, Gumma 370-12, Japan
Abstract： Thin films of VO2 single-crystalline on (0001) sapphire substrates have been prepared by visible pulsed laser ablation technique. The crystal quality and properties of the films are evaluated through electrical resistance measurement, x-ray diffraction (XRD), and Rutherford- backscattering spectroscopy/channeling (RBS/C) analysis. The dependence of the surface electrical resistance of the films on the temperature shows semiconductor-to-metal transitions with the resistance change of 7x103-2 x 104. The hysteresis widths are from less than 1 to 3 K . XRD and RBS/C data reveal that the films prepared in particular conditions are single-crystalline VO2 with the (010) planes parallel to the surface of the sapphire substrate.
ZHU Pei-ran;S. Yamamoto;A. Miyashita;H. Naramoto. Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates[J]. 中国物理快报, 1998, 15(12): 904-906.
ZHU Pei-ran, S. Yamamoto, A. Miyashita, H. Naramoto. Pulsed Laser Deposition of VO2 Single Crystal Thin Films on Sapphire Substrates. Chin. Phys. Lett., 1998, 15(12): 904-906.
1998, Vol. 15 
