Ablation of GaN Using a Femtosecond Laser
LIU Wei-Min1 , ZHU Rong-Yi1 , QIAN Shi-Xiong1 , YUAN Shu2 , ZHANG Guo-Yi3
1 Department of Physics, Fudan University, Shanghai 200433
2 School of Materials Engineering, Nanyang Technological University, BLK N4, Nanyang Avenue, Singapore 6397981
3 Department of Physics, Peking University, Beijing 100871
Ablation of GaN Using a Femtosecond Laser
LIU Wei-Min1 ; ZHU Rong-Yi1 ;QIAN Shi-Xiong1 ;YUAN Shu2 ;ZHANG Guo-Yi3
1 Department of Physics, Fudan University, Shanghai 200433
2 School of Materials Engineering, Nanyang Technological University, BLK N4, Nanyang Avenue, Singapore 6397981
3 Department of Physics, Peking University, Beijing 100871
关键词 ：
81.15.Fg ,
42.62.Fi ,
78.66.Fd
Abstract ： We study the pulse laser ablation of wurtzite gallium nitride (GaN) films grown on sapphire, using the femtosecond laser beam at a central wavelength of 800 nm as the source for the high-speed ablation of GaN films. By measuring the back-scattered Raman spectrum of ablated samples, the dependence of the ablation depth on laser fluence with one pulse was obtained. The threshold laser fluence for ablation of GaN films was determined to be about 0.25 J/cm2 . Laser ablation depth increases with the increasing laser fluence until the amount of removed material was not further increased. The ablated surface was investigated by an optical surface interference profile meter.
Key words ：
81.15.Fg
42.62.Fi
78.66.Fd
出版日期: 2002-11-01
引用本文:
LIU Wei-Min; ZHU Rong-Yi;QIAN Shi-Xiong;YUAN Shu;ZHANG Guo-Yi. Ablation of GaN Using a Femtosecond Laser[J]. 中国物理快报, 2002, 19(11): 1711-1713.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I11/1711
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