Highly c-Oriented Nanocolumn Structure ZnO Films on Sapphire Substrates by Pulsed Laser Deposition
LIU Zhi-Fu1, LI Yong-Xiang1, SHAN Fu-Kai2, XU Zhi-Hua1, YU Yun-Sik2
1The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050
2Electronic Ceramics Center, Dongeui University, Busan 614-714, Korea
Highly c-Oriented Nanocolumn Structure ZnO Films on Sapphire Substrates by Pulsed Laser Deposition
LIU Zhi-Fu1;LI Yong-Xiang1;SHAN Fu-Kai2;XU Zhi-Hua1;YU Yun-Sik2
1The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050
2Electronic Ceramics Center, Dongeui University, Busan 614-714, Korea
Abstract： Highly c-oriented nanocolumn structure ZnO films were successfully deposited on sapphire (0001) substrates by pulsed laser deposition at a substrate temperature of 500°C and 200 mTorr oxygen pressure. X-ray diffraction, scanning electron microscopy, photoluminescence, and spectroscopic ellipsometry were used to characterize the ZnO films. The as-grown film is composed of well-aligned ZnO columns with diameters about 200-300 nm. Photoluminescence spectrum of the ZnO film exhibits a strong near-band-edge emission and a weak deep-level emission band. The optical refractive indices and the extinction coefficients are obtained by fitting the spectroscopic ellipsometry data using the Forouhi-Bloomer dispersion relation.
2004, Vol. 21 
