C-axis Oriented AIN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of AI Combined with Post-Nitridation
HUANG Ji-po, WANG Lian-wei, SHEN Qin-wo, GAO Jian-xia, NI Ru-shan, LIN Cheng-lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050
C-axis Oriented AIN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of AI Combined with Post-Nitridation
HUANG Ji-po;WANG Lian-wei;SHEN Qin-wo;GAO Jian-xia;NI Ru-shan;LIN Cheng-lu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai, 200050
关键词 ：
68.55.-a ,
68.55.Jk ,
81.15.Ef
Abstract ： A new technique for the preparation of AlN thin films by ultrahigh vacuum electron beam evaporation of AI followed by nitridation is reported and by using this method c-axis oriented AJN thin films have been success-fully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy and cross-sectional transmission electron microscope were employed to characterize AIN films. Temperature of nitridation was found to play an important role in the formation of AIN film. By post-nitridation of as-deposited film at 1000°C for lh in N2 , the crystalline AlN film with (002) orientation has been obtained.
Key words ：
68.55.-a
68.55.Jk
81.15.Ef
出版日期: 1998-10-01
引用本文:
HUANG Ji-po;WANG Lian-wei;SHEN Qin-wo;GAO Jian-xia;NI Ru-shan;LIN Cheng-lu. C-axis Oriented AIN Thin Films on Silicon Prepared by Ultrahigh Vacuum Evaporation of AI Combined with Post-Nitridation[J]. 中国物理快报, 1998, 15(10): 732-733.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I10/732
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1998, Vol. 15 
